High nonvolatile modulation of resistance on a ferroelectric PbZr0·2Ti0·8O3 /Nd0.3Sm0.25Sr0·45MnO3 liquid-gated electric-double-layer transistors-Reference-Cited by-同舟云学术

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High nonvolatile modulation of resistance on a ferroelectric PbZr0·2Ti0·8O3 /Nd0.3Sm0.25Sr0·45MnO3 liquid-gated electric-double-layer transistors

Published:2020-03 Issue: Volume:309 Page:113848
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Shao F.,Zhang L.P.,Zhang F.Q.,Teng J.,Chen J.K.,Xu X.G.,Miao J.,Jiang Y.

Funder

National Key R & D Program of China

National Science Foundation of China

National Basic Research Program of China

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference28 articles.

1. Black phosphorus field-effect transistors;Li;Nat. Nanotechnol.,2014

2. Reversible control of interfacial magnetism through ionic-liquid- assisted polarization switching;Herklotz;Nano Lett.,2017

3. Gate control of ferromagnetic insulating phase in lightly-doped La0.875Sr0.125MnO3−δ film;Kuang;Appl. Phys. Lett.,2016

4. Metallic ground state in an ion-gated two-dimensional superconductor;Saito;Science,2015

5. Controlling many-body states by the electric-field effect in a two dimensional material;Li;Nature,2016

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