Strain measured in a silicon-on-insulator, complementary metal-oxide-semiconductor device channel induced by embedded silicon-carbon source/drain regions
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3079656
Reference12 articles.
1. Fabrication and analysis of deep submicron strained-Si n-MOSFET's
2. Effect of mechanical stress induced by etch-stop nitride: impact on deep-submicron transistor performance
3. A Logic Nanotechnology Featuring Strained-Silicon
4. n-MOSFET With Silicon–Carbon Source/Drain for Enhancement of Carrier Transport
5. Process‐induced mechanical stress in isolation structures studied by micro‐Raman spectroscopy
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