Solid phase phosphorous activation in implanted silicon by excimer laser irradiation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3592262
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1. Atomistic calculations of ion implantation in Si: Point defect and transient enhanced diffusion phenomena
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5. Photocarrier Radiometry Characterization of Ultra-shallow Junctions (USJ) in Silicon with Excimer Laser Irradiation;International Journal of Thermophysics;2014-04-18
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