Formation of shallown+pjunctions
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.339784
Reference20 articles.
1. Design of ion-implanted MOSFET's with very small physical dimensions
2. MOS Device and technology constraints in VLSI
3. The suppression of residual defects in silicon implanted with arsenic by rapid isothermal annealing
4. Effect of Furnace Preanneal and Rapid Thermal Annealing on Arsenic‐Implanted Silicon
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1. Design and Fabrication of a Thin-Film Silicon Photodetector with Angular Sensitivity for Optical Micro-Encoder;IEEJ Transactions on Sensors and Micromachines;2007
2. Study of phosphorus implanted and annealed silicon by electrical measurements and ion channeling technique;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2002-06
3. Chapter 6 Studies of the Stripping Hall Effect in Ion-Implanted Silicon;Semiconductors and Semimetals;1997
4. Electrical behaviour of junctions obtained by rapid thermal annealing of BF2 implanted layers;Microelectronic Engineering;1992-09
5. Junction Formation and Poly‐Si Doping for Scaled Sub‐Micron CMOS Technology;Journal of The Electrochemical Society;1992-08-01
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