Effect of Furnace Preanneal and Rapid Thermal Annealing on Arsenic‐Implanted Silicon

Author:

Kwor R.123,Kwong D. L.123,Ho C. C.123,Tsaur B. Y.123,Baumann S.123

Affiliation:

1. Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556

2. Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173

3. Charles Evans and Associates, San Mateo, California 94402

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Cited by 22 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Transient Enhanced Diffusion of Arsenic by Self-Implantation —The role of As-I clusters—;MRS Proceedings;2000

2. Dose rate and thermal budget optimization for ultrashallow junctions formed by low-energy (2–5 keV) ion implantation;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1996-01

3. Ion Implantation;Fundamentals of Semiconductor Processing Technology;1995

4. Simulation of various diffusion processes in implanted silicon;Radiation Effects and Defects in Solids;1994-06

5. The influence of the solubility limit on diffusion of as implants in silicon;Applied Physics A Solids and Surfaces;1993-04

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