Atomic layer deposition of crystalline SrHfO3 directly on Ge (001) for high-k dielectric applications-Reference-Cited by-同舟云学术

Atomic layer deposition of crystalline SrHfO3 directly on Ge (001) for high-k dielectric applications

Published:2015-02-07 Issue:5 Volume:117 Page:054101
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

McDaniel Martin D.¹,Hu Chengqing²,Lu Sirong³,Ngo Thong Q.¹,Posadas Agham⁴,Jiang Aiting²,Smith David J.³,Yu Edward T.²,Demkov Alexander A.⁴,Ekerdt John G.¹

Affiliation:

1. Department of Chemical Engineering, The University of Texas at Austin, Austin, Texas 78712, USA

2. Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758, USA

3. Department of Physics, Arizona State University, Tempe, Arizona 85287, USA

4. Department of Physics, The University of Texas at Austin, Austin, Texas 78712, USA

Funder

National Science Foundation (NSF)

Office of Naval Research (ONR)

Air Force Office of Scientific Research (AFOSR)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4906953

Reference57 articles.

1. Strained Si CMOS (SS CMOS) technology: opportunities and challenges

2. A 90-nm Logic Technology Featuring Strained-Silicon

3. Integrated nanoelectronics for the future

4. Ge based high performance nanoscale MOSFETs

5. Germanium: The Past and Possibly a Future Material for Microelectronics

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