Influence of the composition modulation on the relaxation of In0.54Ga0.46As strained layers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106148
Reference11 articles.
1. Composition modulation in liquid phase epitaxial InxGa1−xAsyP1−ylayers lattice matched to InP substrates
2. Spinodal decomposition in InGaAsP epitaxial layers
3. Transmission electron microscope and transmission electron diffraction observations of alloy clustering in liquid‐phase epitaxial (001) GaInAsP layers
4. Atomic ordering inGa0.47In0.53As andGaxIn1−xAsyP1−yalloy semiconductors
5. Elastic state and thermodynamical properties of inhomogeneous epitaxial layers: Application to immiscible III‐V alloys
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1. Relaxed, high-quality InP on GaAs by using InGaAs and InGaP graded buffers to avoid phase separation;Journal of Applied Physics;2007-08
2. An approach to the formation mechanism of the composition fluctuation in GaInNAs quantum wells;Semiconductor Science and Technology;2005-09-19
3. Strain relaxation in an alloy film with a rough free surface;Journal of Elasticity;2002
4. Growth rate and critical temperatures to avoid the modulation of composition of InGaAs epitaxial layers;Applied Physics Letters;1999-05-03
5. Potential use of the tendency of III—V alloys to separate for fabrication of low dimensionality structures;Microelectronic Engineering;1998-03
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