Strategies for p-type doping of ZnGeN2
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106-9560, USA
2. Materials Department, University of California, Santa Barbara, California 93106-5050, USA
Funder
National Science Foundation
U.S. Department of Defense
Army Research Office
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.5063581
Reference31 articles.
1. Epitaxial growth and characterization of ZnGeN2 by metalorganic vapor phase epitaxy
2. RF-sputter deposition of Zn–Ge nitride thin films
3. Study of intersubband transitions in GaN-ZnGeN2 coupled quantum wells
4. Synthesis, structure, and optoelectronic properties of II–IV–V2materials
5. Designs of blue and green light-emitting diodes based on type-II InGaN-ZnGeN2 quantum wells
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