Epitaxial growth and characterization of ZnGeN2 by metalorganic vapor phase epitaxy-Reference-Cited by-同舟云学术

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Epitaxial growth and characterization of ZnGeN2 by metalorganic vapor phase epitaxy

Published:2004-01 Issue:1-2 Volume:260 Page:125-129
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Misaki Takao,Wakahara Akihiro,Okada Hiroshi,Yoshida Akira

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference21 articles.

1. A New Group of Compounds with Diamond type (Chalcopyrite) Structure

2. Emergence of Chalcopyrites as Nonlinear Optical Materials

3. Ternary Chalcopyrite Semiconductors;Shay,1975

4. For a review see MRS Bull. 23(7) (1998).

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1. Improving luminescence response in ZnGeN₂/GaN superlattices: defect reduction through composition control;Journal of Physics D: Applied Physics;2024-06-24

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3. Physical Properties Resemblance of Optical Material ZnGeN2 with GaN Under Different Higher Pressures;Lecture Notes in Electrical Engineering;2022-09-04

4. Experimental Synthesis of Theoretically Predicted Multivalent Ternary Nitride Materials;Chemistry of Materials;2022-02-01

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