Heteroepitaxial ZnGeN2 on AlN: Growth, Structure, and Optical Properties
Author:
Affiliation:
1. National Renewable Energy Laboratory, Golden, Colorado 80401-3393, United States
2. Colorado School of Mines, Golden, Colorado 80401, United States
Funder
Basic Energy Sciences
Building Technologies Program
Publisher
American Chemical Society (ACS)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.1c01232
Reference36 articles.
1. DOE BTO Lighting R&D Program, 2019 Lighting R&D Opportunities (https://www.energy.gov/sites/default/files/2020/01/f70/ssl-rd-opportunities2-jan2020.pdf).
2. Ternary Nitride Materials: Fundamentals and Emerging Device Applications
3. Utilizing Site Disorder in the Development of New Energy-Relevant Semiconductors
4. Band Offset Engineering in ZnSnN2-Based Heterojunction for Low-Cost Solar Cells
5. Designs of blue and green light-emitting diodes based on type-II InGaN-ZnGeN2 quantum wells
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1. Improving luminescence response in ZnGeN2/GaN superlattices: defect reduction through composition control;Journal of Physics D: Applied Physics;2024-06-24
2. Comparing the influence of cation order and composition in simulated Zn(Sn, Ge)N2 on structure, elastic moduli, and polarization for solid state lighting;Journal of Applied Physics;2024-02-15
3. Electronic Properties of Zn2V(1–x)NbxN3 Alloys to Model Novel Materials for Light-Emitting Diodes;The Journal of Physical Chemistry Letters;2023-10-04
4. Structure, defects, and optical properties of commensurate GaN/ZnGeN2/GaN double heterojunctions;Journal of Materials Chemistry C;2023
5. Simulated Structural and Electronic Properties of Cation-Disordered ZnGeN 2 and its Interface with GaN;Physical Review Applied;2022-12-12
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