Long-wavelength infrared photodetectors based on InSbBi grown on GaAs substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.120429
Reference12 articles.
1. Photoconductance measurements on InAs0.22Sb0.78/GaAs grown using molecular beam epitaxy
2. Long‐wavelength InAsSb photoconductors operated at near room temperatures (200–300 K)
3. 8–13 μm InAsSb heterojunction photodiode operating at near room temperature
4. Propriétés des alliages InSb1−xBix II. Absorption Optique
5. Indium antimonide‐bismuth compositions grown by molecular beam epitaxy
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