Erbium–thulium interaction in broadband infrared luminescent silicon-rich silicon oxide
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1577217
Reference9 articles.
1. Wideband and flat-gain optical amplification from 1460 to 1510 nm by serial combination of a thulium-doped fluoride fibre amplifier and fibre Raman amplifier
2. 1.54 μm photoluminescence of Er3+ doped into SiO2 films containing Si nanocrystals: Evidence for energy transfer from Si nanocrystals to Er3+
3. Composition dependence of room temperature 1.54 μm Er3+ luminescence from erbium-doped silicon:oxygen thin films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition
4. Strong exciton-erbium coupling in Si nanocrystal-doped SiO2
5. The excitation mechanism of rare-earth ions in silicon nanocrystals
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