Titanium‐doped semi‐insulating InP grown by the liquid encapsulated Czochralski method
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96845
Reference4 articles.
1. Further evidence of chromium, manganese, iron, and zinc redistribution in indium phosphide after annealing
2. Electrical properties of cobalt-doped InP
3. New semi‐insulating InP: Titanium midgap donors
4. The current status of the preparation of single crystals, bicrystals, and epitaxial layers of p-InP and of polycrystalline p-InP films for photovoltaic applications
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1. Particle detectors based on semiconducting InP epitaxial layers;Journal of Instrumentation;2011-01-11
2. Ti and Mn co-doped semi-insulating InP particle detectors operating at room temperature;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2005-12
3. Two-dimensional DC simulation methodology for InP/GaAs0.51Sb0.49/InP heterojunction bipolar transistor;Solid-State Electronics;2005-06
4. Investigation of semi-insulating InP co-doped with Ti and various acceptors for use in X-ray detection;Crystal Research and Technology;2005-04
5. Evaluation of semi-insulating Ti-doped and Mn-doped InP for radiation detection;Semiconductor Science and Technology;2001-11-13
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