Electrical properties of cobalt-doped InP
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering,Condensed Matter Physics
Link
http://stacks.iop.org/0022-3719/16/i=36/a=015/pdf
Reference33 articles.
1. Crystal-Field Spectra of3dnImpurities in II-VI and III-V Compound Semiconductors
2. Fe deep level optical spectroscopy in InP
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1. 4d transition-metal impurity rhodium in GaAs grown by metal-organic chemical vapor deposition;Journal of Applied Physics;2008-12
2. Deep level defects in n- and p-type Fe implanted InP;Physica A: Statistical Mechanics and its Applications;1997-08
3. Deep-level transient-spectroscopy study of rhodium in indium phosphide;Physical Review B;1996-03-15
4. Novel ways to grow thermally stable semi-insulating InP-based layers;Journal of Crystal Growth;1994-12
5. MeV energy Fe and Co implants to obtain buried high resistance layers and to compensate donor implant tails in InP;Journal of Applied Physics;1993-02
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