Fourier transformed photoreflectance characterization of interface electric fields in GaAs/GaInP heterojunction bipolar transistor wafers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1623327
Reference11 articles.
1. Contactless electroreflectance characterization of GaInP/GaAs heterojunction bipolar transistor structures
2. Schottky-Barrier Electroreflectance: Application to GaAs
3. Electroreflectance and photoreflectance study of the space-charge region in semiconductors: (In-Sn-O)/InP as a model system
4. Fourier resolution of surface and interface contributions to photoreflectance spectra of multilayered structures
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1. Semiconductor interfacial carrier dynamics via photoinduced electric fields;Science;2015-11-27
2. Dual chopped photoreflectance spectroscopy for nondestructive characterization of semiconductors and semiconductor nanostructures;Review of Scientific Instruments;2008-04
3. Photoreflectance characterization of InP∕GaAsSb double-heterojunction bipolar transistor epitaxial wafers;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2005
4. Correlation between Photoreflectance Spectra and Electrical Characteristics of InP/GaAsSb Double Heterojunction Bipolar Transistors;MRS Proceedings;2004
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