Characterization of (Al,Ga)As injection lasers using the luminescence emitted from the substrate
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.324592
Reference33 articles.
1. Degradation of CW GaAs double-heterojunction lasers at 300 K
2. Defect structure introduced during operation of heterojunction GaAs lasers
3. Rapid degradation phenomenon in heterojunction GaAlAs–GaAs lasers
4. cw degradation at 300°K of GaAs double‐heterostructure junction lasers. I. Emission spectra
5. The Current Dependence of the Intensity of Spontaneous Emission of GaAs Injection Lasers to Full Operating Power
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2. Carrier‐density‐independent radiative constant in 1.3 μm buried heterostructure lasers;Journal of Applied Physics;1995-09-15
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