Carrier‐density‐independent radiative constant in 1.3 μm buried heterostructure lasers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.359861
Reference17 articles.
1. Measurement of radiative recombination coefficient and carrier leakage in 1.3 μm InGaAsP lasers with lightly doped active layers
2. Calculated spectral dependence of gain in excited GaAs
3. Carrier dependence of the radiative coefficient in III‐V semiconductor light sources
4. Measurement of radiative, Auger, and nonradiative currents in 1.3‐μm InGaAsP buried heterostructure lasers
5. Measurement of nonradiative Auger and radiative recombination rates in strained‐layer quantum‐well systems
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1. Optical and Electronic Processes in Semiconductor Materials for Device Applications;Excitonic and Photonic Processes in Materials;2014-07-30
2. Supression of carrier recombination in semiconductor lasers by phase-space filling;Applied Physics Letters;2005-11-14
3. Coupling of large optical loss with Auger recombination in 1.3 μm InGaAsP lasers investigated using hydrostatic pressure;physica status solidi (b);2003-02
4. A note on the semiconductor laser equivalent circuit;Journal of Applied Physics;1999-02-15
5. The temperature dependence of 1.3- and 1.5-μm compressively strained InGaAs(P) MQW semiconductor lasers;IEEE Journal of Selected Topics in Quantum Electronics;1999
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