Detection of nitrogen related traps in nitrided/reoxidized silicon dioxide films with thermally stimulated current and maximum entropy method
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3596455
Reference15 articles.
1. Effect of nitrogen at SiO2/Si interface on reliability issues—negative-bias-temperature instability and Fowler–Nordheim-stress degradation
2. Negative bias temperature instability: Road to cross in deep submicron silicon semiconductor manufacturing
3. Electrical and physical properties of ultrathin reoxidized nitrided oxides prepared by rapid thermal processing
4. Electron spin resonance study of radiation-induced points defects in nitrided and reoxidized nitrided oxides
5. Theory of non-steady-state interfacial thermal currents in MOS devices, and the direct determination of interfacial trap parameters
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2. Study on individual traps in metal–oxide–semiconductor field-effect transistors by means of thermally stimulated threshold voltage shift;Journal of Thermal Analysis and Calorimetry;2015-10-22
3. Annealing Effect on Chain Segment Motion and Charge Trapping and Detrapping in Nylon 1010;Journal of Macromolecular Science, Part B;2014-08-03
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