Vanadium doped Sb2Te3 material with modified crystallization mechanism for phase-change memory application-Reference-Cited by-同舟云学术

Vanadium doped Sb2Te3 material with modified crystallization mechanism for phase-change memory application

Published:2015-06-15 Issue:24 Volume:106 Page:243103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ji Xinglong¹²,Wu Liangcai¹,Cao Liangliang¹,Zhu Min¹,Rao Feng¹,Zheng Yonghui¹²,Zhou Wangyang¹²,Song Zhitang¹,Feng Songlin¹

Affiliation:

1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, 200050 Shanghai, China

2. University of the Chinese Academy of Sciences, 100080 Beijing, China

Funder

National Integrate Circuit Research Program of China

National Key Basic Research Program of China

Science and Technology Council of Shanghai

Strategic Priority Research Program of the Chinese Academy of Sciences

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4922505

Reference15 articles.

1. Crystallization process of Sb‐Te alloy films for optical storage

2. Characterization of nitrogen-doped Sb2Te3 films and their application to phase-change memory

3. One order of magnitude faster phase change at reduced power in Ti-Sb-Te

4. Heat transport inSb2−xVxTe3single crystals

5. Diluted magnetic semiconductors based onSb2−xVxTe3(0.01<~x<~0.03)

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