Influence of hydrogen on the performance of magnetron‐sputtered amorphous hydrogenated silicon field‐effect transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.94500
Reference18 articles.
1. Effect of hydrogen on the density of gap states in reactively sputtered amorphous silicon
2. Properties of amorphous hydrogenated silicon, with special emphasis on preparation by sputtering
3. R.F. sputtered amorphous silicon schottky Barrier solar cells
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2. OPTICAL ENERGY GAP OF MAGNETICALLY CONFINED ARC DISCHARGE D.C. SPUTTERED HYDROGENATED AMORPHOUS SILICON;Physics and Technology of Thin Films;2004-06
3. Thermal annealing effects on aluminium-amorphous silicon diode prepared by RF sputtering;Solar & Wind Technology;1989-01
4. The density of states of sputtered a-Si: H studied by the space-charge-limited current technique The influence of deposition parameters, light and keV-electron irradiation;Philosophical Magazine B;1987-09
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