The density of states of sputtered a-Si: H studied by the space-charge-limited current technique The influence of deposition parameters, light and keV-electron irradiation-Reference-Cited by-同舟云学术

The density of states of sputtered a-Si: H studied by the space-charge-limited current technique The influence of deposition parameters, light and keV-electron irradiation

Published:1987-09 Issue:3 Volume:56 Page:321-333
ISSN:1364-2812
Container-title:Philosophical Magazine B
language:en
Short-container-title:Philosophical Magazine B

Author:

Gangopadhyay S.¹,Schröder B.¹,Geiger J.²

Affiliation:

1. a Universität Kaiserslautern , Fachbereich Physik , D-6750 Kaiserslautern, F.R. , Germany

2. b Department of Physics , Texas Tech University , Lubbock , Texas , 79409 , U.S.A.

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/13642818708221320

Reference44 articles.

1. Influence of hydrogen on the performance of magnetron‐sputtered amorphous hydrogenated silicon field‐effect transistors

2. The contribution of the staebler-wronski effect to gap-state absorption in hydrogenated amorphous silicon

3. Buyer , W. and Overhof , H. 1984. Semiconductors and Semimetals, Edited by: Pankove , J. I. Vol. 21C, 258Orlando: Academic Press.

4. Space‐charge limited conduction inn+nn+amorphous hydrogenated silicon films

5. Correlation of proton damage of silicon with neutron and electron damage

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