Reverse graded relaxed buffers for high Ge content SiGe virtual substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3023068
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1. Observation of two-dimensional hole gas with mobility and carrier density exceeding those of two-dimensional electron gas at room temperature in the SiGe heterostructures
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3. Reduction of threading dislocation density in SiGe layers on Si (001) using a two-step strain–relaxation procedure
4. Reduced pressure–chemical vapor deposition of Ge thick layers on Si(001) for 1.3–1.55-μm photodetection
5. Relaxed GexSi1−x structures for III–V integration with Si and high mobility two-dimensional electron gases in Si
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