Modeling of capacitance transients of thin-film solar cells: A valuable tool to gain information on perturbing layers or interfaces
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4863831
Reference20 articles.
1. Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors
2. Signature of a back contact barrier in DLTS spectra
3. About RC-like contacts in deep level transient spectroscopy and Cu(In,Ga)Se2 solar cells
4. Deep Level Transient Spectroscopy of Bulk Traps and Interface States in Si MOS Diodes
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1. Electrical spectroscopy methods for the characterization of defects in thin-film compound solar cells;Journal of Applied Physics;2022-06-28
2. Investigation of recombination mechanisms in Cu(In,Ga)Se2 solar cells using numerical modelling;Solar Energy;2021-11
3. Diffusion transport over grain-boundary barriers as the origin of N1 deep level transient spectroscopy signal in Cu(In,Ga)Se2 solar cells;Thin Solid Films;2021-03
4. Experimental Investigation of the Photocapacitance Effect in Organic Heterojunction Devices;Transactions on Electrical and Electronic Materials;2020-03-03
5. Can we see defects in capacitance measurements of thin‐film solar cells?;Progress in Photovoltaics: Research and Applications;2019-10-02
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