Calculation of gain‐current characteristics in ZnCdSe‐ZnSe quantum well structures including many body effects-Reference-Cited by-同舟云学术

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Calculation of gain‐current characteristics in ZnCdSe‐ZnSe quantum well structures including many body effects

Published:1995-12-18 Issue:25 Volume:67 Page:3780-3782
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Rees P.,Logue F. P.,Donegan J. F.,Heffernan J. F.,Jordan C.,Hegarty J.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.115381

Reference20 articles.

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Theoretical investigation of InGaN self-pulsating laser diodes for optical storage applications;IEE Proceedings - Optoelectronics;2006-12-01

2. Compound Heterostructure Semiconductor Lasers and Photodetectors;Low Temperature Electronics;2001

3. Optical gain in GaN quantum wells with many-body effects;Physical Review B;1999-12-15

4. Influence of Coulomb correlations on gain and stimulated emission in (Zn,Cd)Se/Zn(S,Se)/(Zn,Mg)(S,Se) quantum-well lasers;Physical Review B;1998-07-15

5. Optical gain in (Zn, Cd)Se–Zn(S, Se) quantum wells;Journal of the Optical Society of America B;1998-04-01

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