Optical gain in GaN quantum wells with many-body effects
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.60.16675/fulltext
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1. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
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3. InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices
4. Optical gain and carrier lifetime of InGaN multi‐quantum well structure laser diodes
5. Band-gap renormalization in semiconductor quantum wells containing carriers
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