A new approach to investigate leakage current mechanisms in infrared photodiodes from illuminated current-voltage characteristics
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4893899
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1. I-V modeling of current limiting mechanisms in HgCdTe FPA detectors
2. Mechanism of carrier transport across the junction of narrow band-gap planar n+p HgCdTe photodiodes grown by liquid-phase epitaxy
3. Analysis of temperature dependence of dark current mechanisms for long-wavelength HgCdTe photovoltaic infrared detectors
4. Temperature dependence characteristics of dark current for arsenic doped LWIR HgCdTe detectors
5. Analytical modelling of carrier transport mechanisms in long wavelength planar n+–p HgCdTe photovoltaic detectors
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