Inclusions in Si whiskers grown by Ni metal induced lateral crystallization-Reference-Cited by-同舟云学术

Inclusions in Si whiskers grown by Ni metal induced lateral crystallization

Published:2017-04-14 Issue:14 Volume:121 Page:145301
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Radnóczi György Zoltán¹,Knez Daniel²,Hofer Ferdinand²,Frangis Nikolaos³,Vouroutzis Nikolaos³,Stoemenos John³,Pécz Béla¹

Affiliation:

1. Centre for Energy Research, Institute for Technical Physics and Material Science, Hungarian Academy of Sciences, MTA EK MFA, Konkoly-Thege M. u. 29-33, 1121 Budapest, Hungary

2. Institute for Electron Microscopy and Nanoanalysis and Graz Centre for Electron Microscopy, TU Graz, Steyrergasse 17, 8010 Graz, Austria

3. Department of Physics, Aristotle University of Thessaloniki, GR-54124 Thessaloniki, Greece

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4979728

Reference21 articles.

1. Modeling of grain growth mechanism by nickel silicide reactive grain boundary effect in metal-induced-lateral-crystallization

2. Effect of electric field on amorphous silicon thin films during Ni induced lateral crystallization

3. Characterizations of polycrystalline silicon nanowire thin-film transistors enhanced by metal-induced lateral crystallization

4. Polycrystalline silicon thin-film transistor utilizing self-assembled monolayer for crystallization

5. Excimer laser annealing of amorphous and solid-phase-crystallized silicon films

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