Novel GaAs voltage‐controllable negative differential resistance transistor prepared by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100747
Reference4 articles.
1. AlGaAs/GaAs double barrier diodes with high peak‐to‐valley current ratio
2. Variable N-type negative resistance in an injection-gated double-injection diode
3. Negative-resistance field-effect transistor grown by organometallic chemical vapor deposition
4. MBE grown n+-i-δ(p+)-i-n+GaAs V-groove barrier transistor
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1. Electrical properties of a heterojunction bipolar transistor structure with a resistive gate;Solid-State Electronics;1994-09
2. N-shaped negative differential resistance in a transistor structure with a resistive gate;IEEE Transactions on Electron Devices;1994
3. Demonstration of high peak‐to‐valley current ratio in anN‐p‐nAlGaAs/GaAs structure;Journal of Applied Physics;1993-06
4. Application of Doping-Superlattice Collector Structure for GaAs Bipolar Transistor;Japanese Journal of Applied Physics;1993-04-15
5. Fabrication of heterostructure-emitter bipolar transistor with a doping-superlattice collector;Superlattices and Microstructures;1993-01
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