Demonstration of high peak‐to‐valley current ratio in anN‐p‐nAlGaAs/GaAs structure
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.353913
Reference6 articles.
1. Novel real-space hot-electron transfer devices
2. Bipolar - JFET - MOSFET negative resistance devices
3. Resonant tunneling transistors with controllable negative differential resistances
4. Heterostructure devices using self-aligned p-type diffused ohmic contacts
5. Quantum well tunnel triode
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1. Bias Dependent Current-Voltage (I–V) Characteristics of Ferroelectric Potassium Nitrate: Poly (Vinyl Fluoride) Composite Films;Ferroelectrics Letters Section;2013-01
2. N-shaped negative differential resistance in a transistor structure with a resistive gate;IEEE Transactions on Electron Devices;1994
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