Sequential lateral solidification of silicon thin films on low-k dielectrics for low temperature integration-Reference-Cited by-同舟云学术

Sequential lateral solidification of silicon thin films on low-k dielectrics for low temperature integration

Published:2014-12-15 Issue:24 Volume:105 Page:242904
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Carta Fabio¹,Gates Stephen M.²,Limanov Alexander B.³,Hlaing Htay¹,Im James S.³,Edelstein Daniel C.²,Kymissis Ioannis¹

Affiliation:

1. Department of Electrical Engineering, Columbia University, New York, New York 10027, USA

2. IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, USA

3. Department of Applied Physics and Applied Mathematics, Division of Material Science and Engineering, Columbia University, New York, New York 10027, USA

Funder

National Science Foundation (NSF)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4904938

Reference20 articles.

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4. A new era of crystallization: advances in polysilicon crystallization and crystal engineering

5. C. Prat , M. Stehlé , and D. Zahorski , inSID Symposium Digest of Technical Papers( Wiley Online Library, 1999), Vol. 30, pp. 298–301.

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