Anisotropy of defect introduction by electron irradiation in compound semiconductors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.333324
Reference10 articles.
1. Orientation Dependence of Electron Radiation Damage in InSb
2. Irradiation induced intrinsic excitonic luminescence in cadmium telluride
3. EPR Observation of Close Frenkel Pairs in Irradiated ZnSe
4. Identification of the defect state associated with a gallium vacancy in GaAs andAlxGa1−xAs
5. Anisotropic defect introduction in n and p-GaAs by electron irradiation
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2. TheE1–E2 center in gallium arsenide is the divacancy;Journal of Physics: Condensed Matter;2015-01-30
3. A Deep Level Transient Spectroscopy Study of Electron and Proton Irradiated ${\hbox {p}} ^{+} {\hbox {n}}$ GaAs Diodes;IEEE Transactions on Nuclear Science;2010-08
4. Electric field effect on the carrier capture of deep traps in p-type InP;Journal of Applied Physics;2010-04-15
5. Effect of fill-pulse parameters on deep-level transient spectroscopy peaks in highly doped p-type InP;Journal of Applied Physics;2000-07-15
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