Influence of contamination on the dislocation-related deep level C1 line observed in deep-level-transient spectroscopy of n-type silicon: A comparison with the technique of electron-beam-induced current-Reference-Cited by-同舟云学术

Influence of contamination on the dislocation-related deep level C1 line observed in deep-level-transient spectroscopy of n-type silicon: A comparison with the technique of electron-beam-induced current

Published:2003-01-15 Issue:2 Volume:93 Page:1069-1074
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Knobloch Klaus,Kittler Martin,Seifert Winfried

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1532938

Reference10 articles.

1. Electrical properties of dislocations and point defects in plastically deformed silicon

2. Defect states in plastically deformedn-type silicon

3. Influence of copper contamination on recombination activity of misfit dislocations in SiGe/Si epilayers: Temperature dependence of activity as a marker characterizing the contamination level

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