Etching effects during the chemical vapor deposition of (100) diamond-Reference-Cited by-同舟云学术

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Etching effects during the chemical vapor deposition of (100) diamond

Published:1999-09 Issue:9 Volume:111 Page:4291-4299
ISSN:0021-9606
Container-title:The Journal of Chemical Physics
language:en
Short-container-title:The Journal of Chemical Physics

Author:

Battaile C. C.,Srolovitz D. J.,Oleinik I. I.,Pettifor D. G.,Sutton A. P.,Harris S. J.,Butler J. E.

Publisher

AIP Publishing

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.479727

Reference55 articles.

1. Infrared detection of gaseous species during the filament‐assisted growth of diamond

2. Mole fractions of H, CH3, and other species during filament‐assisted diamond growth

3. Direct monitoring of CH3in a filament‐assisted diamond chemical vapor deposition reactor

4. Dependence of the gas composition in a microwave plasma-assisted diamond chemical vapor deposition reactor on the inlet carbon source: CH4 versus C2H2

5. Detailed surface and gas-phase chemical kinetics of diamond deposition

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1. Quantum chemistry model of surface reactions and kinetic model of diamond growth: Effects of CH3 radicals and C2H2 molecules at low-temperatures CVD;Diamond and Related Materials;2024-11

2. Quantum Chemistry Model of Surface Reactions and Kinetic Model of Diamond Growth: Effects of Ch3 Radicals and C2h2 Molecules at Low-Temperatures Cvd;2024

3. Etching Kinetics of Nanodiamond Seeds in the Early Stages of CVD Diamond Growth;ACS Omega;2023-07-03

4. Two-dimensional computational fluid dynamics modeling of slip-flow heat transfer in the hot filament chemical vapor deposition process;Surface and Coatings Technology;2023-03

5. Atomistic simulations of ∑3 [110](111) grain boundary in diamond: Structure, stability, and properties;International Journal of Quantum Chemistry;2022-09-22

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