The comprehensive study and the reduction of contact resistivity on the n-InGaAs M-I-S contact system with different inserted insulators
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://scitation.aip.org/deliver/fulltext/aip/journal/adva/5/5/1.4921023.pdf?itemId=/content/aip/journal/adva/5/5/10.1063/1.4921023&mimeType=pdf&containerItemId=content/aip/journal/adva
Reference20 articles.
1. Fermi-level depinning for low-barrier Schottky source/drain transistors
2. Reduction in Specific Contact Resistivity to $ \hbox{n}^{+}$ Ge Using $\hbox{TiO}_{2}$ Interfacial Layer
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