Fermi Level Depinning in Two-Dimensional Materials Using a Fluorinated Bilayer Graphene Barrier-Reference-Cited by-同舟云学术

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Fermi Level Depinning in Two-Dimensional Materials Using a Fluorinated Bilayer Graphene Barrier

Published:2022-08-10 Issue:8 Volume:4 Page:3955-3961
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Sun Cunzhi¹²³,Xiang Cheng²³,Hong Rongdun¹,Zhang Feng¹^ORCID,Booth Timothy J.²³^ORCID,Bøggild Peter²³^ORCID,Doan Manh-Ha²³

Affiliation:

1. Department of Physics, Xiamen University, Xiamen 361005, P. R. China

2. Department of Physics, Technical University of Denmark, Kgs. Lyngby 2800, Denmark

3. Centre for Nanostructured Graphene (CNG), Technical University of Denmark, Kgs. Lyngby 2800, Denmark

Funder

Danmarks Grundforskningsfond

Villum Fonden

China Scholarship Council

Graphene Flagship

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.2c00609

Reference47 articles.

1. Moore's law: the future of Si microelectronics

2. The chips are down for Moore’s law

3. Promises and prospects of two-dimensional transistors

4. Transistors based on two-dimensional materials for future integrated circuits

5. Graphene transistors

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1. Surface Gate-Defined Quantum Dots in MoS₂ with Bi Contacts;Journal of the Physical Society of Japan;2024-09-15

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