Single step quantum well intermixing with multiple band gap control for III-V compound semiconductors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1780608
Reference17 articles.
1. Quantum well intermixing in material systems for 1.5 μm (invited)
2. Band‐gap tuning of InGaAs/InGaAsP/InP laser using high energy ion implantation
3. Stripe‐geometry quantum well heterostructure AlxGa1−xAs‐GaAs lasers defined by defect diffusion
4. A universal damage induced technique for quantum well intermixing
5. Kinetics of implantation enhanced interdiffusion of Ga and Al at GaAs‐GaxAl1−xAs interfaces
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4. Ultrafast optical switching in Kerr nonlinear photonic crystals;Frontiers of Physics in China;2010-05-20
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