Nucleation of lateral compositional modulation in InGaP epitaxial films grown on (001) GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3677995
Reference24 articles.
1. Semiconductor Nanostructures
2. Self-assembled chains of single layer InP/(In,Ga)P quantum dots on GaAs (001)
3. Controlled growth of InP/In0.48Ga0.52P quantum dots on GaAs substrate
4. Planar ordering of InP quantum dots on (1 0 0)In0.48Ga0.52P
5. Self-Organized Quantum-Wire Lattice via Step Flow Growth of a Short-Period Superlattice
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1. Analysis of GaAsBi growth regimes in high resolution with respect to As/Ga ratio using stationary MBE growth;Journal of Crystal Growth;2019-04
2. Detailed carrier recombination in lateral composition modulation structure;Applied Physics Express;2018-08-03
3. Thickness modulation and strain relaxation in strain-compensated InGaP/InGaP multiple-quantum-well structure grown by metalorganic molecular beam epitaxy on GaAs (100) substrate;Journal of Crystal Growth;2016-09
4. InGaP solar cells fabricated using solid-source molecular beam epitaxy;Journal of Crystal Growth;2013-09
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