Valence band offset of GaAs/GaAs0.68P0.32multiple quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.109484
Reference21 articles.
1. Very low threshold current density 1.5 μm GaInAs/AlGaInAs graded‐index separate‐confinement‐heterostructure strained quantum well laser diodes grown by organometallic chemical vapor deposition
2. Characteristics of strained In/sub 0.65/Ga/sub 0.35/As/In/sub 0/./sub 52/Al/sub 0/./sub 48/As HEMT with optimized transport parameters
3. Very-high-performance highly strained Ga/sub 0.23/In/sub 0.77/As channel MODFETs
4. Electronic structure of GaAsxP1−x/GaP strained‐layer superlattices with x<0.5
5. Quantum size effects in GaAs/GaAsxP1−xstrained‐layer superlattices
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1. Band parameters for III–V compound semiconductors and their alloys;Journal of Applied Physics;2001-06
2. Modulation spectroscopy study of a strained layer GaAs/GaAsP multiple quantum well structure;Journal of Electronic Materials;2000-11
3. Light-hole resonant tunneling through a tensile-strained GaAsP quantum well;Applied Physics Letters;1997-08-25
4. Optical study of good quality InGaP/GaAs quantum wells: Influence of the indium content around the lattice‐matched composition;Applied Physics Letters;1996-04-08
5. Valence band offsets in strained GaAs1−xPx/GaAs heterojunctions;Journal of Electronic Materials;1995-06
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