The effect of post deposition low energy plasma bombardment on the ultra thin hydrogenated silicon oxide films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.360448
Reference17 articles.
1. Low‐temperature deposition of high‐quality silicon dioxide by plasma‐enhanced chemical vapor deposition
2. Preparation and properties of SiO2–SiOx heterostructures formed by uninterrupted processing by remote plasma enhanced chemical vapor deposition
3. Low‐energy ion‐enhanced deposition of SiO2in rf magnetron plasmas
4. Low-temperature oxidation of a-Si:H thin film in modulated low-energy magnetron plasmas
5. Reduced leakage current and improved breakdown voltage of silicon oxide films deposited in low energy RF discharges at room temperature
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Audio-frequency glow discharge for plasma chemical vapor deposition from organic compounds of the carbon family;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1999-03
2. Chemical etching of thin SiOxCyHz films by post-deposition exposure to oxygen plasma;Applied Surface Science;1999-01
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