The impacts of electronic state hybridization on the binding energy of single phosphorus donor electrons in extremely downscaled silicon nanostructures-Reference-Cited by-同舟云学术

The impacts of electronic state hybridization on the binding energy of single phosphorus donor electrons in extremely downscaled silicon nanostructures

Published:2014-08-14 Issue:6 Volume:116 Page:063705
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

The Anh Le,Moraru Daniel,Manoharan Muruganathan,Tabe Michiharu,Mizuta Hiroshi

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4893181

Reference34 articles.

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4. Statistical Variability in Fully Depleted SOI MOSFETs Due to Random Dopant Fluctuations in the Source and Drain Extensions

5. Random doping-induced fluctuations of subthreshold characteristics in MOSFET devices

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