Random doping-induced fluctuations of subthreshold characteristics in MOSFET devices
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference26 articles.
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3. Intrinsic MOSFET parameter fluctuations due to random dopant placement;Tang;IEEE Trans. VLSI Syst.,1997
4. Modeling statistical dopant fluctuations in MOS transistors;Stolk;IEEE Trans. Electron. Devices,1998
5. Experimental study of threshold voltage fluctuation due to statistical variation of channel dopant number in MOSFETs;Mizuno;IEEE Trans. Electron. Devices,1994
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