Simulation of 3D FinFET doping profiles by ion implantation-Reference-Cited by-同舟云学术

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Simulation of 3D FinFET doping profiles by ion implantation

Published:2012 Issue: Volume: Page:
ISSN:0094-243X
Container-title:AIP Conference Proceedings
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Author:

Wang Liping,Brown Andrew R.,Cheng Binjie,Asenov Asen

Publisher

AIP

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 3D AND-Type Stacked Array for Neuromorphic Systems;Micromachines;2020-08-31

2. Interplay Between Statistical Variability and Reliability in Contemporary pMOSFETs: Measurements Versus Simulations;IEEE Transactions on Electron Devices;2014-09

3. Analytical Models for Three-Dimensional Ion Implantation Profiles in FinFETs;IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems;2013-12

4. Geometry, Temperature, and Body Bias Dependence of Statistical Variability in 20-nm Bulk CMOS Technology: A Comprehensive Simulation Analysis;IEEE Transactions on Electron Devices;2013-05

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