Scattering times in AlGaN/GaN two-dimensional electron gas from magnetoresistance measurements
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.373758
Reference31 articles.
1. CW operation of short-channel GaN/AlGaN doped channel heterostructure field effect transistors at 10 GHz and 15 GHz
2. Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistors
3. Two-dimensional electron gas at a semiconductor-semiconductor interface
4. Magneto-quantumtransport on GaAs-AlxGa1−xAs heterostructures at very low temperatures
5. Localization of 2D electrons in GaAsAlxGa1−xAs heterostructures
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1. Enhanced Shubnikov–de Haas Oscillations in High Mobility InAlN/GaN Two-Dimensional Electron Gas;ACS Applied Electronic Materials;2024-08-01
2. Room temperature two-dimensional electron gas scattering time, effective mass, and mobility parameters in AlxGa1−xN/GaN heterostructures (0.07 ≤ x ≤ 0.42);Journal of Applied Physics;2023-11-09
3. Enhanced quantum oscillations and scattering effect in quaternary InAlGaN/GaN two-dimensional electron gas;Applied Physics Letters;2023-05-15
4. Polarization-Induced 2D Electron and Holes in Undoped AlN/GaN/AlN Heterostructures;Springer Theses;2022
5. Suppression of weak localization due to AlN interlayer in AlGaN/GaN 2DEG;Physics Letters A;2021-11
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