Photon-mediated entanglement scheme between a ZnO semiconductor defect and a trapped Yb ion
Author:
Affiliation:
1. Department of Physics, University of Washington, Seattle, Washington 98195, USA
2. Department of Electrical and Computer Engineering, University of Washington, Seattle, Washington 98195, USA
Funder
U.S. Department of Energy
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/am-pdf/10.1063/5.0019892
Reference47 articles.
1. Neutral-Atom Wavelength-Compatible 780 nm Single Photons from a Trapped Ion via Quantum Frequency Conversion
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5. Continuous generation of single photons with controlled waveform in an ion-trap cavity system
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