Dose dependence of crystallization in implanted polycrystalline silicon films on SiO2
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.99392
Reference13 articles.
1. The effect of germanium ion implantation dose on the amorphization and recrystallization of polycrystalline silicon films
2. Modifying Polycrystalline Films Through Ion Channelling
3. Stochastic model for grain size versus dose in implanted and annealed polycrystalline silicon films on SiO2
4. Implant‐dose dependence of grain size and {110} texture enhancements in polycrystalline Si films by seed selection through ion channeling
5. Large spontaneous nucleation rate in implanted polycrystalline silicon films on SiO2
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1. Laser nucleation and solid phase crystallization of a-Si:H;SPIE Proceedings;2012-10-15
2. In-Plane Grain Orientation Alignment of Polycrystalline Silicon Films by Normal and Oblique-Angle Ion Implantations;Japanese Journal of Applied Physics;2012-04-20
3. In-Plane Grain Orientation Alignment of Polycrystalline Silicon Films by Normal and Oblique-Angle Ion Implantations;Japanese Journal of Applied Physics;2012-04-01
4. Fundamentals for the formation and structure control of thin films;Handbook of Thin Films;2002
5. Crystal grain nucleation in amorphous silicon;Journal of Applied Physics;1998-11-15
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