Band offsets between SiO2 and phase change materials in the (GeTe)x(Sb2Te3)1−x pseudobinary system
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3573787
Reference26 articles.
1. Proceedings of the 2005 International Conference on Solid State Devices and Materials;Miao X. S.,2005
2. Microscopic origin of the fast crystallization ability of Ge–Sb–Te phase-change memory materials
3. Understanding the phase-change mechanism of rewritable optical media
4. Unravelling the interplay of local structure and physical properties in phase-change materials
5. The role of vacancies and local distortions in the design of new phase-change materials
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Probing embedded topological modes in bulk-like GeTe-Sb2Te3 heterostructures;Scientific Reports;2020-12
2. Threshold-voltage modulated phase change heterojunction for application of high density memory;Applied Physics Letters;2015-09-28
3. Configuration effects of superlattice-like phase change material structure;physica status solidi (b);2012-08-24
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