Effect of hydrogenation on transport and magnetic properties in homogeneous amorphous MnxGe1−x:H films-Reference-Cited by-同舟云学术

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Effect of hydrogenation on transport and magnetic properties in homogeneous amorphous MnxGe1−x:H films

Published:2011-04-15 Issue:8 Volume:109 Page:083906
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Qin Yu-Feng,Yan Shi-Shen,Xiao Shu-Qin,Li Qiang,Dai Zheng-Kun,Shen Ting-Ting,Kang Shi-Shou,Dai You-Yong,Liu Guo-Lei,Chen Yan-Xue,Mei Liang-Mo

Funder

National Basic Research Program of China

National Science Foundation

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3573781

Reference15 articles.

1. A Group-IV Ferromagnetic Semiconductor: Mn x Ge 1− x

2. Ferromagnetic percolation in MnxGe1−x dilute magnetic semiconductor

3. Magnetic and transport properties of homogeneous MnxGe1−x ferromagnetic semiconductor with high Mn concentration

4. Magneto-optical and magnetotransport properties of amorphous ferromagnetic semiconductor Ge1−xMnx thin films

5. Effect of hydrogenation on the ferromagnetism in polycrystalline Si1−xMnx:B thin films

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Critical Review of Current Studies on Hydrogen Defect in Diluted Magnetic Semiconductors and Relative Ferroelectric Materials for Smart Electronic Applications;Journal of Superconductivity and Novel Magnetism;2022-09-30

2. Large nonlinear Hall effect in (FeCo)0.67Ge0.33/Ge heterojunctions;International Journal of Modern Physics B;2019-05-20

3. Rashba spin–orbit coupling enhanced anomalous Hall effect in MnxSi1−x/SiO2/Si p–i–n junctions;RSC Advances;2016

4. Formation of ferromagnetic germanides by solid-state reactions in 20Ge/80Mn films;Thin Solid Films;2014-02

5. Oscillation of coercivity between positive and negative in MnxGe1−x:H ferromagnetic semiconductor films;Chinese Physics B;2013-05

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