Rashba spin–orbit coupling enhanced anomalous Hall effect in MnxSi1−x/SiO2/Si p–i–n junctions

Author:

Yang A. C.12345,Yan S. S.12345,Zhang K.12345,Li H. H.12345,Pei J.12345,He L. M.12345,Tian Y. F.12345,Qin Y. F.67895,Kang S. S.12345,Xiao S. Q.12345

Affiliation:

1. School of Physics

2. State Key Laboratory of Crystal Materials

3. Shandong University

4. Jinan

5. People's Republic of China

6. Department of Applied Physics

7. School of Information Science and Engineering

8. Shandong Agricultural University

9. Taian

Abstract

The Mn0.48Si0.52/SiO2/Si p–i–n junction shows greatly enhanced negative anomalous Hall effect in the high temperature range due to the interfacial Rashba spin–orbit coupling.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

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