Rashba spin–orbit coupling enhanced anomalous Hall effect in MnxSi1−x/SiO2/Si p–i

Rashba spin–orbit coupling enhanced anomalous Hall effect in MnxSi1−x/SiO2/Si p–i–n junctions

Published:2016 Issue:61 Volume:6 Page:55930-55935
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Yang A. C.¹²³⁴⁵,Yan S. S.¹²³⁴⁵,Zhang K.¹²³⁴⁵,Li H. H.¹²³⁴⁵,Pei J.¹²³⁴⁵,He L. M.¹²³⁴⁵,Tian Y. F.¹²³⁴⁵,Qin Y. F.⁶⁷⁸⁹⁵,Kang S. S.¹²³⁴⁵,Xiao S. Q.¹²³⁴⁵

Affiliation:

1. School of Physics

2. State Key Laboratory of Crystal Materials

3. Shandong University

4. Jinan

5. People's Republic of China

6. Department of Applied Physics

7. School of Information Science and Engineering

8. Shandong Agricultural University

9. Taian

Abstract

The Mn_0.48Si_0.52/SiO₂/Si p–i–n junction shows greatly enhanced negative anomalous Hall effect in the high temperature range due to the interfacial Rashba spin–orbit coupling.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/RA/C6RA05340H

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