Inhibition of atomic hydrogen etching of Si(111) by boron doping
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.349320
Reference21 articles.
1. Modulated molecular-beam studies of the surface chemistry of silicon reaction with reactive gases
2. Ni impurity effec̀ts on hydrogen surface chemistry and etching of Si(111)
3. An ESDIAD study of chemisorbed hydrogen on clean and H-exposed Si(111)-(7 × 7)
4. Chemical etching of Si(111)‐(7×7) and Al/Si(111) by atomic hydrogen
5. Nature of the hydride species on the hydrogenated silicon (111)-(7 .times. 7) surface
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1. Hydrogen chemisorption on Si(111)√3×√3R30∘-B passivated surface studied by thermal desorption and scanning tunneling microscopy;Surface Science;2011-08
2. Modification of Physical Properties of Silicon Nanowires, Grown Onto Ag(110), by Selective Adsorption: From Atomic Hydrogen to Molecules;Science of Advanced Materials;2011-06-01
3. Etching of silicon nanowires on Ag(110) by atomic hydrogen;Surface Science;2009-12
4. Hydrogen interaction with Si(111)root 3x root 3-B surfaces;APPL SURF SCI;2004
5. Optical Second Harmonic Spectroscopy of Boron-Reconstructed Si(001);Physical Review Letters;2000-04-10
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