Etching of silicon nanowires on Ag(110) by atomic hydrogen-Reference-Cited by-同舟云学术

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Etching of silicon nanowires on Ag(110) by atomic hydrogen

Published:2009-12 Issue:23 Volume:603 Page:3350-3354
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Salomon E.,Angot T.,Thomas C.,Layet J.-M.,Palmgren P.,Nlebedim C.I.,Göthelid M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference21 articles.

1. Self-aligned silicon quantum wires on Ag(110)

2. Formation of a one-dimensional grating at the molecular scale by self-assembly of straight silicon nanowires

3. Atomic structure of Si nanowires on Ag(110): A density-functional theory study

4. Growth of Straight, Atomically Perfect, Highly Metallic Silicon Nanowires with Chiral Asymmetry

5. One-dimensional organic nanostructures: A novel approach based on the selective adsorption of organic molecules on silicon nanowires

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1. Chemical Interaction of Hydrogen Radicals (H*) with Transition Metal Nitrides;The Journal of Physical Chemistry C;2023-09-06

2. Epitaxial growth and structural properties of silicene and other 2D allotropes of Si;Nanoscale Advances;2023

3. First-principles calculation to investigate the influence of shear deformation on the electronic structure and optical properties of hydrogenated silicene;Computational and Theoretical Chemistry;2022-01

4. Silicene;Xenes;2022

5. Silicene growth on Ag(110) and Ag(111) substrates reconsidered in light of Si–Ag reactivity;Nanotechnology;2021-01-25

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